Quantum confinement effects in gallium nitride nanostructures:ab initioinvestigations
نویسندگان
چکیده
منابع مشابه
Quantum confinement effects in gallium nitride nanostructures: ab initio investigations.
We present ab initio density functional investigations of the atomic and electronic structure of gallium nitride nanodots and nanowires. With increasing diameter, the average Ga-N bond length in the nanostructures increases, as does the relative stability (heat of formation), approaching the values for bulk GaN. As the diameter decreases, the band gap increases, with the variation for the nanod...
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Project supported by the Wang Faculty Fellowship at Peking University, Beijing, China, 2006-2007 through California State University (CSU) International Programs USA; the National Basic Research Program of China (Grant No 2007CB307004), the National High Technology Research and Development Program of China (Grant No 2006AA03A113), and the National Natural Science Foundation of China (Grant Nos ...
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Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...
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In wide bandgap GaN a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 1019 to 1020 cm-3 in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models a nitrogen vacancy acts as a donor but its...
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There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2009
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/20/42/425401